The Paper's Abstract of The 3rd
International Conference on Imaging Science and Hardcopy
　

　

Effect of buffer layer on life-time of electroluminescent device

 　
　 　

May 26-29,1998
Chongqing China

Mei Zhang, Sinsuke Ninomiya, Aumi Ito, and Yoshikazu Nakayama

 Dept. of Physics and Electronics, College of Engineering, Osaka Prefecture University
1-1 Gakuen-cho, Sakai, Osaka 599, Japan Phone: Int.+81+722-52-1161 Ext. 2269, 
Fax: Int.+81+722-59-9072 E-mail: zhang@dd.pe.osakafu-u.ac.jp

　
　 Abstract:
　       Electroluminescent (EL) devices using polysilanes have attracted great attention. It is well known that the light emission comes from the recombination of electrons and holes near the interface of cathode electrode-polysilane because electron can not transport in polysilanes. The emitting lifetime of the device is mainly limited by the damage of the cathode electrode due to the thermal effect of the nonradiative recombination. In this work, we insert a buffer layer between cathode electrode and polysilane and investigate its effects.
    Two kinds of EL devices were fabricated. One was in cathode electrode (Mg:In) - poly (methylphenylsilane) (PMPS) - transparent anode electrode (tin oxide) structure. The other was inserted a buffer layer between Mg:In electrode and PMPS. Carbon nitride (CNx) film with 2 nm thickness was used as the buffer layer. It is found that the emission intensity at the same current increases and the beginning time of degradation in emission intensity is extended due to the insertion of CNx layer. The surface observation of Mg:In electrode and PMPS. Carbon nitride (CNx) film with 2 nm thickness was used as the buffer layer. It is found that the emission intensity at the same current increases and the beginning time of degradation in emission intensity is extended due to the insertion of CNx layer. The surface observation of Mg:In electrodes after degradation shows that the Mg:In electrode of the device without CNx layer is damaged during light emission, however, there is no electrode damage in the device with CNx layer. Inserting CNx layer as a buffer is a effective way to increase the lifetime of EL devices.

　

中国复印科学与工程学会
Reprographic Scientists and Engineers Society of China 
7 Chang-Tu Rd.Tianjin300131,China  Tel:(22)26669189 Fax: (22)26669189 
E-mail: rsesc@public.tpt.tj.cn
.