The Paper's Abstract of The 3rd
International Conference on Imaging Science and Hardcopy
　

　

Hole Drift Mobility Along Silicon Chains in Polysilane Films ( Invited Paper )

 　
　 　

May 26-29,1998
Chongqing China

Yoshikazu Nakayama, Akira Saito, Shinsuke Ninomiya, and Seiji 
Akita
Dept. of Physics and Electronics, Osaka Prefecture University
1-1 Gakuen-cho, Sakai, Osaka 599, Japan Phone: +81-722-52-1161, ext. 2268  
Fax: +81-722-92-9072  E-mail: nakayama@pe.osakafu-u.ac.jp
　 Abstract:
　       Oriented polysilane  films are expected to have hole drift mobilities in the orientation of silicon chains higher than ~10-4 cm2/Vs which is a typical value measured for unoriented polysilane films. However, there has been no report on its direct measurement, because of differin oriented polysilane films. The time-of-flight measurement indicated that for (c-HexSiMe)n, orientation decreases the energetic disorder by a factor of 0.6 and the pre-exponential factor of drift mobility perpendicular to the orientation by two orders of magnitude as compared with those of unoriented films. The hopping transport theory suggests that the pre-exponential factor of drift mobility in intrachain hopping is four orders of magnitude higher than that in interchain hopping. These lead us to estimate that the drift mobility in the orientation is about 10-1 cm2/Vs.

中国复印科学与工程学会
Reprographic Scientists and Engineers Society of China 
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